Sidewall angle tuning in focused electron beam-induced processing

• Sangeetha Hari,
• Willem F. van Dorp,
• Johannes J. L. Mulders,
• Piet H. F. Trompenaars,
• Pieter Kruit and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2024, 15, 447–456, doi:10.3762/bjnano.15.40

• . As before, the extended model is two-dimensional and the evolution of a deposit geometry is studied as a function of etching location and exposure dose. All units in the model are arbitrary. The geometry of the deposit is as in Figure 2a, with a flat top and Gaussian sidewalls. The water molecules

TEM sample preparation of lithographically patterned permalloy nanostructures on silicon nitride membranes

• Joshua Williams,
• Michael I. Faley,
• Joseph Vimal Vas,
• Peng-Han Lu and
• Rafal E. Dunin-Borkowski

Beilstein J. Nanotechnol. 2024, 15, 1–12, doi:10.3762/bjnano.15.1

• in the copolymer (higher sensitivity) the chain scission reaction occurs at low doses; at higher doses, both layers were exposed. The exposure scheme is given in Figure 3. The doses were chosen by considering that the copolymer is 2–3 times more sensitive than PMMA [25]. If the exposure dose is too

Electron beam-induced deposition of platinum from Pt(CO)₂Cl₂ and Pt(CO)₂Br₂

• Aya Mahgoub,
• Hang Lu,
• Rachel M. Thorman,
• Konstantin Preradovic,
• Titel Jurca,
• Lisa McElwee-White,
• Howard Fairbrother and
• Cornelis W. Hagen

Beilstein J. Nanotechnol. 2020, 11, 1789–1800, doi:10.3762/bjnano.11.161

• more linearly with exposure dose. In order to do so, a refresh time equal to ten times the dwell time was introduced immediately after each exposed location, so that the growth should be less limited by the precursor supply. Further, the waiting time between passes was doubled to 20 ms and the number

• : 5 kV, 400 pA, 12 ms dwell time, 50 passes, pitch between exposed pixels of 20 nm, and exposure dose of 596 nC/µm2. The total deposition time was 100 s. EDX measurements were performed on these deposits. Typical spectra are shown in Supporting Information File 1, Figure S1. The Pt(CO)2Cl2 square

Integration of sharp silicon nitride tips into high-speed SU8 cantilevers in a batch fabrication process

• Nahid Hosseini,
• Matthias Neuenschwander,
• Oliver Peric,
• Santiago H. Andany,
• Jonathan D. Adams and
• Georg E. Fantner

Beilstein J. Nanotechnol. 2019, 10, 2357–2363, doi:10.3762/bjnano.10.226

• so large that it touches the sample, which we have not observed so far. One way to reduce this problem could be adjusting the exposure dose to values not higher than absolutely required. The increased detection bandwidth of the SU8 cantilevers arises from the viscoelastic nature of the SU8 polymer

Atomic force acoustic microscopy reveals the influence of substrate stiffness and topography on cell behavior

• Yan Liu,
• Li Li,
• Xing Chen,
• Ying Wang,
• Meng-Nan Liu,
• Jin Yan,
• Liang Cao,
• Lu Wang and
• Zuo-Bin Wang

Beilstein J. Nanotechnol. 2019, 10, 2329–2337, doi:10.3762/bjnano.10.223

• topography is determined by both the exposure dose and the development of the SU-8 films. We cultured L929 cells on undeveloped and developed SU-8 surfaces as well as on a reference glass substrate. The structural responses of the L929 cells on the substrate topography were probed using AFAM. A fluorescence

• with increasing exposure dose. This could be attributed to the increase of the surface stiffness. To further characterize the elasticity of the substrate the Young’s moduli of the undeveloped arrays were calculated using the Hertzian model. Here, the Young’s modulus measurements were repeated twenty

• , while the Young´s moduli of the unexposed regions change by only about 35 ± 1 MPa. Moreover, the Young’s moduli of the stripes are much higher than those in the unexposed regions. These results show that the EBL exposure dose largely determines the stiffness of the stripes, but not that of the unexposed

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• varied in the range of 0.04–6.5 µm and the dose varied in the range of 80–4000 µC·cm−2. Images showing examples of resulting doughnut structures are presented in Figure 8a–d. Equation 2 shows the relationship between the exposure dose and the forward scattered and “backscattered” components [44]: with Q

• being the exposure dose required to clear out the resist from the centre of the doughnut due to the proximity effect, Qp being the threshold dose required for full clearance of the resist, R1 being the inner radius of the doughnut, α being the standard deviation of the forward-scattered deposited energy

Ion beam profiling from the interaction with a freestanding 2D layer

• Ivan Shorubalko,
• Kyoungjun Choi,
• Michael Stiefel and
• Hyung Gyu Park

Beilstein J. Nanotechnol. 2017, 8, 682–687, doi:10.3762/bjnano.8.73

• resultant pore diameter. In return, the pore dimension as a function of the exposure dose brings out the ion beam profiles. Using this method of determining an ion-beam point spread function, we verify a Gaussian profile of focused gallium ion beams. Graphene sputtering yield is extracted from the

• source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does. Keywords: exposure dose; focused ion beam; freestanding 2D layer; graphene; ion beam diameter; ion beam point spread function

• interaction with 2D materials contains information about beam profiles [14][17][18]. Here we show that it is possible to fabricate pores in graphene membranes smaller than the ion beam diameter by carefully tailoring the exposure dose. The pore diameters directly depend on the time for which individual pixels

Analysis of soil bacteria susceptibility to manufactured nanoparticles via data visualization

• Rong Liu,
• Yuan Ge,
• Patricia A. Holden and
• Yoram Cohen

Beilstein J. Nanotechnol. 2015, 6, 1635–1651, doi:10.3762/bjnano.6.166

• of bacterial taxa at a given taxonomic level) in relative abundance. TRA denotes total relative abundance. The treatments are labelled as “--.##d.##c”, where “--” identifies the treatment type (i.e., TiO2 MNP, ZnO MNP, or control), “##d” denotes exposure time of ## day, and “##c” represents exposure

• dose of ##×10−2 mg/g (soil). Bipartite graph for bacterial taxon → MNP treatment at order level. Soil bacteria taxa identified for the above graph are for the 95th–5th percentile range ≥ 10/n (n denotes the total number of bacterial taxa at a given taxonomic level) in relative abundance. TRA denotes

Using natural language processing techniques to inform research on nanotechnology

• Nastassja A. Lewinski and
• Bridget T. McInnes

Beilstein J. Nanotechnol. 2015, 6, 1439–1449, doi:10.3762/bjnano.6.149

• dose, concentration and exposure dose parameters are critical for the interpretation of this data. While text mining is useful, it is only the first step. Current nano-focused NLP systems are not sufficient to reveal relationships or connections between data. Close collaboration and communication

Fabrication of high-resolution nanostructures of complex geometry by the single-spot nanolithography method

• Alexander Samardak,
• Margarita Anisimova,
• Aleksei Samardak and
• Alexey Ognev

Beilstein J. Nanotechnol. 2015, 6, 976–986, doi:10.3762/bjnano.6.101

• lithography; exposure dose; high-resolution lithography; nanomagnets; nanostructure; overexposure; PMMA; polymer; resist carbonization; Introduction The continuous growth of the nanotechnology and microelectronic industries requires the development of new approaches and methods for the formation of nanoscale

• 107 pixels per second) [6] and the expense involved in the mass production process. One possible solution to these mentioned issues is to use the dual-tone property of polymer resists, which depends on the exposure dose and enables the fast and inexpensive fabrication of high-resolution nanopatterns

• . Depending on the exposure dose, PMMA can act as a positive or negative resist [9][10]. PMMA’s dual-tone resist capability opens up a simple and inexpensive route to produce a range of polymer nanostructures using direct overexposure of the electron beam [11][12][13][14][15]. In this paper we report on the

Electron-stimulated purification of platinum nanostructures grown via focused electron beam induced deposition

• Brett B. Lewis,
• Michael G. Stanford,
• Jason D. Fowlkes,
• Kevin Lester,
• Harald Plank and
• Philip D. Rack

Beilstein J. Nanotechnol. 2015, 6, 907–918, doi:10.3762/bjnano.6.94

• function of exposure dose (time × current / cross-sectional area) for the different beam energies. Consistent with electron stimulated reactions, the apparent reaction cross-section decreases with increasing beam energy [24]. Because the reaction cross section is envisioned to scale with the electron

Influence of gold, silver and gold–silver alloy nanoparticles on germ cell function and embryo development

• Ulrike Taylor,
• Daniela Tiedemann,
• Christoph Rehbock,
• Wilfried A. Kues,
• Stephan Barcikowski and
• Detlef Rath

Beilstein J. Nanotechnol. 2015, 6, 651–664, doi:10.3762/bjnano.6.66

• where transferred to recipient dams. Therefore, when interpreting such data for its predictive value, the assessment of the exposure dose for its closeness to reality is a critical point. Interestingly, gold nanoparticles did not seem to trigger any toxicity in embryos regardless of dose [106]. In our

High speed e-beam lithography for gold nanoarray fabrication and use in nanotechnology

• Jorge Trasobares,
• François Vaurette,
• Marc François,
• Hans Romijn,
• Jean-Louis Codron,
• Dominique Vuillaume,
• Didier Théron and
• Nicolas Clément

Beilstein J. Nanotechnol. 2014, 5, 1918–1925, doi:10.3762/bjnano.5.202

• fabricated by (a) the “conventional” method with an exposure dose of 16000 µC/cm2 (4 fC/dot), (b) the “advanced conventional” method with an exposure dose of 16000 µC/cm2 (4 fC/dot) (c) the DOTF method with an exposure dose of 160 µC/cm2 (4 fC/dot) (d) the “sequence” method with an exposure dose of 12000 µC

Fabrication of carbon nanomembranes by helium ion beam lithography

• Xianghui Zhang,
• Henning Vieker,
• André Beyer and
• Armin Gölzhäuser

Beilstein J. Nanotechnol. 2014, 5, 188–194, doi:10.3762/bjnano.5.20

• revealed the dose-dependent coverage, i.e., the relative monolayer area, whose density of cross-links surpassed a certain threshold value, as a function of the exposure dose. A complete cross-linking of aromatic SAMs by He+ ion irradiation requires an exposure dose of about 850 µC/cm2, which is roughly 60

• that an excessive exposure to He+ ions (>4000 µC/cm2) leads to a damage of the CNMs, which is attributed to the swelling of the Au substrate from ion implantation [24]. A complete cross-linking of NBPT SAMs by He+ ion irradiation requires an exposure dose of approximately 850 µC/cm2, which is roughly

• the threshold cross-linking density at a given dose. As shown in Figure 4, the cross-linked area coverage in dependence on the exposure dose can be described by two superimposed sigmoid functions represented by the following cumulative Gaussian distribution functions where θ is the cross-linked area